Fast THz Modulator based on the stagger-netlike GaN HEMT active metamaterial

Yuncheng Zhao,1 Yaxin Zhang,1* Shixiong Liang,2 Zhihong Feng,2 Ziqiang Yang,1*
1Terahertz Science Cooperative Innovation Center, University of Electronic Science and Technology of China
No.4, Section 2, North Jianshe Road, Chengdu, 610054, China
2 National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Hezuo Road, Shijiazhuang, 050051, China
Nano-Micro Conference, 2017, 1, 01007
Published Online: 04 October 2017 (Abstract)
DOI:10.11605/cp.nmc2017.01007
Corresponding Author. Email: Yaxin Zhang, This email address is being protected from spambots. You need JavaScript enabled to view it.; Ziqiang Yang, This email address is being protected from spambots. You need JavaScript enabled to view it.

How to Cite

Citation Information: Yuncheng Zhao, Yaxin Zhang, Shixiong Liang, Zhihong Feng, Ziqiang Yang. Nano-Micro Conference, 2017, 1, 01007 doi: 10.11605/cp.nmc2017.01007

History

Received: 12 June 2017, Accepted: 18 June 2017, Published Online: 04 October 2017

Abstract

Terahertz technology promises unique applications in high speed communication, high accuracy imaging and so on [1]. However, one major bottleneck for developing Terahertz application systems is the lack of high-performance dynamic devices for effectively manipulating the Terahertz wave. In recent years, the rapid development of two-dimensional electron gas (2DEG) devices provides a promising way to develop dynamic terahertz devices [2]. In this paper, we combined a stagger-netlike metamaterial array with high-electron-mobility transistor (HEMT) structure to form a electronic grid-controlled THz modulator. By controlling the carrier concentration of 2DEG, the mode conversion between two kinds of dipolar resonances has been realized. Modulation depth of this device can reach up to 94%. More importantly, in the dynamic test, 600 MHz sinusoidal signals was received by a THz detector. It may provide a way to achieve effective active devices in THz wireless communication system.

Figure 1

Figure 1. (a) 3-D structure of a GaN HEMT metamaterial unit cell. (b) Schematic of the THz modulator. (c)Simulation transmission spectrum results with different carrier density. (d) Image of packaged THz modulator. (e)The received sinusoidal modulating signals.

References

[1] P. H. Siegel, Terahertz technology. IEEE Transactions on Microwave Theory and Techniques. 50(3), 910-928 (2002). doi:10.1109/22.989974
[2] Yaxin Zhang; Shen Qiao; Shixiong Liang; Zhenhua Wu; Ziqiang Yang; Zhihong Feng; Han Sun; Yucong Zhou; Linlin Sun; Zhi Chen; Xianbing Zou; Bo Zhang; Jianhao Hu; Shaoqian Li; Qin Chen; Ling Li; Gaiqi Xu; Yuncheng Zhao; Shenggang Liu, Gbps Terahertz External Modulator Based on a Composite Metamaterial with a Double-Channel Heterostructure. Nano Letters, 15, 3501-3506 (2015). doi:10.1021/acs.nanolett.5b00869

Open Access

This article is licensed under a Creative Commons Attribution 4.0 International License. (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
© The Author(s) 2017


[1] P. H. Siegel, Terahertz technology. IEEE Transactions on Microwave Theory and Techniques. 50(3), 910-928 (2002). doi:10.1109/22.989974[2] Yaxin Zhang; Shen Qiao; Shixiong Liang; Zhenhua Wu; Ziqiang Yang; Zhihong Feng; Han Sun; Yucong Zhou; Linlin Sun; Zhi Chen; Xianbing Zou; Bo Zhang; Jianhao Hu; Shaoqian Li; Qin Chen; Ling Li; Gaiqi Xu; Yuncheng Zhao; Shenggang Liu, Gbps Terahertz External Modulator Based on a Composite Metamaterial with a Double-Channel Heterostructure. Nano Letters, 15, 3501-3506 (2015). doi:10.1021/acs.nanolett.5b00869

 

Comments (0)

There are no comments posted here yet

Leave your comments

Posting comment as a guest. Sign up or login to your account.
Attachments (0 / 3)
Share Your Location