Volume 1 (2017)

Yoshihiro Shimazu*
Proceedings of the Nature Research Society, Volume 1, Article Number 01008, 2017
Published Online: 27 October 2017 (Article)
DOI: 10.11605/j.pnrs.201701008

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Figures

Figure 1. (a) Optical image of an FET with a multilayer MoS2 channel (thickness ~6 nm) on a SiO2/Si substrate.  (b) Ids–Vg curves for Vds = 0.1 V in vacuum and air with varying values of pressure. (c) Ids–Vg curves for Vds = 0.1 V measured under different environmental conditions. (d) The threshold gate voltages Vth1, Vth2 (open triangles), and DVth = Vth2 – Vth1 (filled circles) as functions of relative humidity. Figure 2. Ids–Vg curves measured at various temperatures. In this measurement, Vds was maintained at 1 V. The sample was cooled in helium gas for heat exchange. At 240 K, the hysteresis due to the charge trapping related to the adsorbed molecules completely disappears. The curves are offset vertically for clarity. Figure 3. Ids–Vg curves at various temperatures. Vds was kept at 5 V. n-channel behavior of the FET is clearly shown. The inset shows Ids–Vds curves for Vg = 10 V, where significant nonlinearity due to the Schottky barrier is observed, except for the curve corresponding to 290 K. The hysteresis is very small for these Ids–Vg and Ids–Vds curves. The thickness of the MoS2 flake of this device was measured to be ~70 nm. Figure 4. Ids–Vg curves at 30 mK for Vds = 3 V with a scan rate of 0.59 V/s. An abrupt jump in Ids is observed in the upward scan of Vg. The threshold voltage for the jump in Ids is scattered among repeated scans. In the downward scan, Ids decreases continuously. This anomalous hysteresis can be explained by quantum tunneling through the Schottky barrier. The inset shows the profile of the conduction band minimum together with the Fermi energies in the source and drain electrodes when Vg and Vds are above their threshold values.  Figure 5. Scan-rate dependence of the Ids–Vg curve measured at 1 K with Vds kept at 5 V. The sample used for this result was different from that for Figs. 3 and 4. The size of the hysteresis increases with an increase in the scan rate, suggesting that the hysteresis is related to a slow process with a time constant of ~1 s. The curve in the downward scan, which is denoted by the dashed line, did not show significant dependence on the scan rate.

Lixiu Guan,1 Guifeng Chen,2 Xiaolin Song,2 Hong Wang,2 Junguang Tao2*
Proceedings of the Nature Research Society, Volume 1, Article Number 01007, 2017
Published Online: 26 October 2017 (Article)
DOI: 10.11605/j.pnrs.201701007

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Figures

Figure 1. XRD pattern of as-prepared (a) and post-treated TiO2 nanobelts (b). (c) is the XRD pattern of MoS2/TiO2. (d) is XRD pattern of pure MoS2 flowers. Figure 3. Etching effect for different surface modification methods. TEM images of TiO2-NH (a), TiO2-NHH (b) and TiO2-H (c). Figure 4. Comparison of valence band of TiO2 nanobelts (black curve) and that after MoS2 growth (red curve). (a) for TiO2-NH, (b) for TiO2-NHH, and (c) for TiO2-H. (d) Schematic diagram of band alignment for MoS2/TiO2 heterostructures with different surface treatments. Figure 5. The photocatalytic performance of MoS2/TiO2 heterostructure.(a) MoS2/TiO2-NHH (b) MoS2/TiO2-NH (c) MoS2/TiO2-H. The degradation rate is given in (d). Figure 6. Electrocatalytic performance of MoS2/TiO2 hybrids. (a) Polarization curves of various samples with different treatments as well as that of Pt and commercial MoS2 powder for comparison. (b) is the corresponding Tafel plots for (a). Figure 7. Electrochemical impedance measurement. Nyquist plots of commercial MoS2 (black squares) and MoS2/TiO2-H (red circles). Figure 2. SEM images of TiO2 nanobelts (a), and MoS2 flowers (b). (c), (e) and (g) are TiO2 nanobelts with different surface post-treatments: (c) TiO2-NH, (e) TiO2-NHH, and (f) TiO2-H. (d), (f) and (h) are MoS2/TiO2 complex for (d) TiO2-NH, (f) TiO2-NHH, and (g) TiO2-H.

Changlong Chen,* Liuyuan Han, Ranran Lu, Qinglong Liu
Proceedings of the Nature Research Society, Volume 1, Article Number 01006, 2017
Published Online: 16 October 2017 (Article)
DOI:10.11605/j.pnrs.201701006

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Figure 1. (a) XRD patterns of the sample films: the as-hydrothermally deposited (blue), after heat treated (black) and after heat treated and photoelectrochemically etched (red). The black arrows refer to the hexagonal WO3 (JCPDS No.33-1387). SEM images of the samples before (b, c) and after (d) photoelectrochemical etching. Figure 2. (a) LSV from the WO3 films before and after etching under AM 1.5G illumination at 100 mW/cm2 and in dark; (b) relationship of the etching photocurrent to the etching time conducted at a potential of 1.8 V vs. RHE. Figure 3. IPCE and UV-Vis spectrum of the etched WO3 film.

Mei Zhu*
Proceedings of the Nature Research Society, Volume 1, Article Number 01005, 2017
Published Online: 13 October 2017 (Article)
DOI: 10.11605/j.pnrs.201701005

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Kiki Kurniawan, Noritake Murakami, Yuto Tango, Takumi Izawa, Kakeru Nishikawa, Ken Watanabe, Hideaki Miyake, Tomoyuki Tajima, Yutaka Takaguchi*
Proceedings of the Nature Research Society, Volume 1, Article Number 01004, 2017
Published Online: 09 October 2017 (Article)
DOI: 10.11605/j.pnrs.201701004

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Jianling Zhang, Yan Yao, Haigang Yang, Yuyan Yu, Shoubin Xu, Long Jiang,* Yi Dan*
Proceedings of the Nature Research Society, Volume 1, Article Number 01003, 2017
Published Online: 27 September 2017 (Article)
Doi: 10.11605/j.pnrs.201701003

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Naofumi Shimizu,1* Ken Matsuyama2
Proceedings of the Nature Research Society, Volume 1, Article Number 01002, 2017
Published Online: 23 September 2017 (Article)
DOI: 10.11605/j.pnrs.201701002

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João Conde*
Proceedings of the Nature Research Society, Volume 1, Article Number 01001, 2017
Published Online: 15 September 2017 (Commentary)
DOI: 10.11605/j.pnrs.201701001

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